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 To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER * UPS USE
CT30SM-12
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4.5 1.5
r
5.0 2
2
19.5MIN.
4
20.0
3.2
4.4
1.0 q 5.45 w e 5.45
0.6
2.8
4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e
VCES ................................................................................ 600V IC ......................................................................................... 30A High Speed Switching Low VCE Saturation Voltage
q
TO-3P
APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc.
MAXIMUM RATINGS
Symbol VCES VGES VGEM IC ICM PC Tj Tstg --
(Tc = 25C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight VGE = 0V VCE = 0V VCE = 0V
Conditions
Ratings 600 20 30 30 60 250 -40 ~ +150 -40 ~ +150 4.8
Unit V V V A A W C C g
Feb.1999
Typical value
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER * UPS USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CES IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr td (off) tf Rth (j-c) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Thermal resistance
(Tj = 25C)
Test conditions IC = 1mA, VGE = 0V VGE = 30V, VCE = 0V VCE = 600V, VGE = 0V IC = 3.0mA, VCE = 10V IC = 30A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz
Limits Min. 600 -- -- 4.5 -- -- -- -- -- -- -- -- -- Typ. -- -- -- 6.0 2.5 1480 180 54 30 135 135 250 -- Max. -- 0.5 1 7.5 3.0 -- -- -- -- -- -- -- 0.50
Unit V A mA V V pF pF pF ns ns ns ns C/W
VCC = 300V, Resistance load, IC = 30A, VGE = 15V, RGE = 20 Junction to case
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10
Tj = 25C
50 COLLECTOR CURRENT IC (A)
VGE = 20V
OUTPUT CHARACTERISTICS (TYPICAL)
15V 12V Tj = 25C 11V
40
8
30
10V
6
20
9V
4
IC = 60A 30A 10A
10
8V
2
0
0
2
4
6
8
10
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER * UPS USE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 50
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V)
5
4
COLLECTOR CURRENT IC (A)
VGE = 15V Tj = 25C
VCE = 10V Tj = 25C
40
3
30
2
20
1
10
0
0
10
20
30
40
50
0
0
4
8
12
16
20
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE Cies, Coes, Cres (pF)
SWITCHING TIME (ns)
CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 104 7 5 3 2 Cies 103 7 5 3 2 102 7 5 3 Tj = 25C 2 VGE = 0V 101
f = 1MHZ Coes
SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 0 10 23 5 7 101 23 5 7 102
tf td(off) Tj = 25C VCC = 300V VGE = 15V RG = 20
tr
td(on)
Cres
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 20
VCC = 200V
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7101 100
TRANSIENT THERMAL IMPEDANCE Zth (j-c)
7 5 3 2
16
300V
10-1
7 5 3 2 7 5 3 2
12
8
10-2
7 5 3 2
10-2
7 5 3 2
4
0
0
20
40
60
80
100
10-3
10-3 10-5 2 3 5 710-4 2 3 5 710-3 PULSE WIDTH tw (s)
Feb.1999
GATE CHARGE Qg (nc)


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